high thermal conductivity, similar thermal expansion coefficient with Si, excellent electrical resistivity and good chemical stability.
Besides, Aluminium Nitride is non-toxic.
Application
high-power circuits, RF and microwave circuits, GaAs crystal crucible, Al evaporation pan,
MHD power generation equipment
Other non-standard products , please contact us to provide drawings of your products
MATERIAL PROPERTIES
Material Properties of Aluminum Nitride Substrate/Wafer | |
Property Content | Property Index |
Density(g/cm3) | 3.335 |
Resistance to Thermal Shock | No Cracks |
Thermal conductivity(30°C, W/m.k) | ≥170 |
Linear expansion coefficient (/°C, 5°C/min, 20-300°C) | 2.805×10-6 |
Flexural strength (MPa) | 382.7 |
Volume Resistivity (Ω.cm) | 1.4×1014 |
Dielectric constant(1MHz) | 8.56 |
Chemical Durability (mg/cm2) | 0.97 |
Dielectric strength (KV/mm) | 18.45 |
Surface roughness Ra(μm) | 0.3~0.5 |
Camber (length‰) | ≤2‰ |
Appearance/ Color | Dense/ Dark Gray |
| Note: The general characteristics of the materials described above were derived from laboratory test performed by Innovacera from time on sample quantities. Actual characteristics of production lots may vary. |
HIGHBORN is one of the leading precise ceramic and quartz manufacturer in China.
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which with leading technology strength, excellent operational management and high-quality services
what made us be recognized by customers of the chemical, petroleum, electric power, metallurgy,machinery and other industries.
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